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Search for "optimized design" in Full Text gives 6 result(s) in Beilstein Journal of Nanotechnology.
Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars
Beilstein J. Nanotechnol. 2019, 10, 2383–2395, doi:10.3762/bjnano.10.229
- design for increased resolution and sensitivity in magnetometry using these emitters [51][52][53][62]. An optimized design based on finite-element method analysis is also proposed for the enhancement of the VSi defect emission. The optimized design is a pillar with a radius of ca. 210 nm radius and a
Optimization of the optical coupling in nanowire-based integrated photonic platforms by FDTD simulation
Beilstein J. Nanotechnol. 2018, 9, 2248–2254, doi:10.3762/bjnano.9.209
- , Russia LPICM-CNRS, Ecole Polytechnique, Université Paris-Saclay, 91128 Palaiseau, France, Saint Petersburg Electrotechnical University "LETI", ul. Professora Popova 5, 197376 Saint Petersburg, Russia 10.3762/bjnano.9.209 Abstract The optimized design of a photonic platform based on a nanowire light
The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability
Beilstein J. Nanotechnol. 2018, 9, 1856–1862, doi:10.3762/bjnano.9.177
- investigated. Moreover, the impact of the Ge mole fraction in the proposed Si1−xGex source region on the electrical figures of merit (FoMs) of the transistor, including the swing factor and the ION/IOFF ratio is analyzed. It is found that the optimized design with 60 atom % of Ge offers improved switching
- , where the optimized design exhibits an improved switching behavior at the nanoscale level. These results make the optimized device suitable for designing digital circuit for high-performance nanoelectronic applications. Keywords: ambipolar conduction; heterojunctions; junctionless tunneling field
- function of the transistor channel length for both the proposed Si1−xGex/Si/Ge DG-HJ-JL TFET design and the conventional Ge-DG-JL TFET structure with tch = 5 nm, xGe = 0.6 and Nd = 1·1019 cm−3. The optimized design provides better scaling capability than the conventional one and exhibits a faster decrease
Thickness-modulated tungsten–carbon superconducting nanostructures grown by focused ion beam induced deposition for vortex pinning up to high magnetic fields
Beilstein J. Nanotechnol. 2016, 7, 1698–1708, doi:10.3762/bjnano.7.162
- minimum at a field value of 2.2 T, two orders of magnitude larger than in the pioneering studies in the 1970s with micrometric thickness modulation [25][27]. As far as we know, this is a record value regarding resistance–field minima caused by vortex pinning, which is explained by the optimized design of
Optimized design of a nanostructured SPCE-based multipurpose biosensing platform formed by ferrocene-tethered electrochemically-deposited cauliflower-shaped gold nanoparticles
Beilstein J. Nanotechnol. 2015, 6, 1840–1852, doi:10.3762/bjnano.6.187
- ; nanotechnology; optimized design; screen-printed carbon electrode (SPCE) nanostructuration; Introduction Simplicity of design, cost-effectiveness and lightweight are among the most important requirements for the design of devices that can be used for the development of on-site analytical methods [1][2][3
Some reflections on the understanding of the oxygen reduction reaction at Pt(111)
Beilstein J. Nanotechnol. 2013, 4, 956–967, doi:10.3762/bjnano.4.108
- step (RDS) on Pt, which would be an essential step toward an optimized design of new ORR electrocatalysts [15]. Results and Discussion Ideally, the surface structure and composition of a catalyst remain unchanged over the whole potential range in which a probe reaction is scrutinized. However, as can
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